Title:
ドーパントプロファイルを形成するための方法
Document Type and Number:
Japanese Patent JP2012511819
Kind Code:
A
Abstract:
A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.
More Like This:
Inventors:
Holzer, Jörg
Franke, Dieter
Brendin, Gabriele
Faber, Marco
Schmidt, Billfleet
Franke, Dieter
Brendin, Gabriele
Faber, Marco
Schmidt, Billfleet
Application Number:
JP2011540024A
Publication Date:
May 24, 2012
Filing Date:
December 03, 2009
Export Citation:
Assignee:
Shot zoral age
International Classes:
H01L21/225; H01L21/22; H01L31/04
Domestic Patent References:
| JPS5165774U | 1976-05-24 | |||
| JP2008021824A | 2008-01-31 |
Foreign References:
| EP0874387B1 | 2004-02-18 | |||
| US3956036A | 1976-05-11 |
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa