Title:
METHOD FOR MANUFACTURING P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, SOLAR BATTERY DEVICE, AND METHOD FOR MANUFACTURING SOLAR BATTERY DEVICE
Document Type and Number:
Japanese Patent JP2018174275
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a p-type diffusion layer-attached semiconductor substrate, which enables the simplification of a manufacturing process and can achieve the increase in power generation efficiency.SOLUTION: A method for manufacturing a p-type diffusion layer-attached semiconductor substrate comprises the steps of: applying a p-type diffusion layer-forming composition 11 containing a boron-containing compound to a surface of an n-type semiconductor substrate 10 to form a layer of the composition for forming a p-type diffusion layer 12, of which the mass of the boron-containing compound per unit area is 0.001-0.1 mg/cm; performing a thermal diffusion process on the semiconductor substrate with the p-type diffusion layer-forming composition layer applied thereto in an atmosphere of 800-1050°C with an oxygen density of less than 1 vol.%; performing a thermal oxidation process on the semiconductor substrate after the thermal diffusion process in an atmosphere of an oxygen density of 1-100 vol.%; and forming an n-type diffusion layer 14 on a rear face of the semiconductor substrate in a state in which the surface of the semiconductor substrate is protected by a thermal oxide film 21 formed by the thermal oxidation process.SELECTED DRAWING: Figure 1
Inventors:
SHIMIZU NARIYOSHI
SATO TETSUYA
SAIJO NOBUTOSHI
NOJIRI TAKESHI
SATO TETSUYA
SAIJO NOBUTOSHI
NOJIRI TAKESHI
Application Number:
JP2017072890A
Publication Date:
November 08, 2018
Filing Date:
March 31, 2017
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
H01L21/225; H01L31/068; H01L31/18
Attorney, Agent or Firm:
Patent Service Corporation Taiyo International Patent Office