Title:
METHOD FOR MANUFACTURING P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, SOLAR BATTERY DEVICE, AND METHOD FOR MANUFACTURING SOLAR BATTERY DEVICE
Document Type and Number:
Japanese Patent JP2018174276
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a p-type diffusion layer-attached semiconductor substrate, which enables the simplification of a manufacturing process and can achieve the increase in power generation efficiency.SOLUTION: A method for manufacturing a p-type diffusion layer-attached semiconductor substrate comprises the steps of: applying a p-type diffusion layer-forming composition containing a boron-containing compound to a surface of each semiconductor substrate to form a p-type diffusion layer-forming composition layer of which the mass of the boron-containing compound per unit area is 0.001-0.1 mg/cm; putting together the two semiconductor substrates so that the surfaces of semiconductor substrates where the p-type diffusion layer-forming composition layer is applied face each other and setting the two semiconductor substrates in a diffusion furnace, and performing a thermal diffusion process in an atmosphere of 900-1000°C with an oxygen density of less than 1 vol.%; performing a thermal oxidation process on the semiconductor substrates after the thermal diffusion process in an atmosphere of an oxygen density of 1-100 vol.%; and forming an n-type diffusion layer on a rear face of each semiconductor substrate in an atmosphere of 800-900°C after the thermal oxidation process.SELECTED DRAWING: None
Inventors:
SHIMIZU NARIYOSHI
SATO TETSUYA
SAIJO NOBUTOSHI
NOJIRI TAKESHI
SATO TETSUYA
SAIJO NOBUTOSHI
NOJIRI TAKESHI
Application Number:
JP2017072891A
Publication Date:
November 08, 2018
Filing Date:
March 31, 2017
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
H01L21/225; H01L31/18
Attorney, Agent or Firm:
Patent Service Corporation Taiyo International Patent Office