Title:
METHOD OF MANUFACTURING SILICON EPITAXIAL WAFER, AND SILICON EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP2019079834
Kind Code:
A
Abstract:
To provide a method of manufacturing a silicon epitaxial wafer capable of reducing deterioration in afterimage characteristics and white scratch failures when used for an imaging element.SOLUTION: A method of manufacturing a silicon epitaxial wafer includes the following steps of: preparing a silicon substrate; forming a silicon epitaxial layer on the silicon substrate; and removing a natural oxide film on a surface of the formed silicon epitaxial layer, and then, performing RTA processing. A thickness D of the silicon epitaxial layer formed at the step of forming the silicon epitaxial layer, is set to be equal to or more than a predetermined thickness according to an oxygen concentration A of the prepared silicon substrate.SELECTED DRAWING: Figure 1
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Inventors:
MIZUSAWA YASUSHI
Application Number:
JP2017202984A
Publication Date:
May 23, 2019
Filing Date:
October 19, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/324; H01L21/20; H01L21/26; H01L21/322
Domestic Patent References:
| JP2000044389A | 2000-02-15 | |||
| JP2013197373A | 2013-09-30 | |||
| JP2003007634A | 2003-01-10 | |||
| JPH11150119A | 1999-06-02 | |||
| JP2003031582A | 2003-01-31 | |||
| JP2000077418A | 2000-03-14 | |||
| JP2013089858A | 2013-05-13 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi