Title:
SEMICONDUCTOR POWER MODULE
Document Type and Number:
Japanese Patent JP2019079839
Kind Code:
A
Abstract:
To obtain a semiconductor power module in which overheat prevention related to destruction of a plurality of semiconductor elements is realized by one temperature detection element.SOLUTION: A semiconductor power module includes an insulating substrate, a plurality of semiconductor elements disposed on one surface of the insulating substrate via a die bonding material, a dissipation plate provided on the other surface of the insulating substrate, and a temperature detection element provided in one of the plurality of semiconductor elements, and the thermal resistance from the surface in contact with the die bonding material of the semiconductor element provided with the temperature detection element to the other surface not in contact with the insulating substrate of the heat dissipation plate is larger than the thermal resistance from the surface in contact with the die bonding material of the semiconductor element without the temperature detection element to the other surface not in contact with the insulating substrate of the dissipation plate.SELECTED DRAWING: Figure 4
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Inventors:
TAKAHAMA SHUICHI
SAKATA KAZUKI
TANI MASAKAZU
SAKATA KAZUKI
TANI MASAKAZU
Application Number:
JP2017203242A
Publication Date:
May 23, 2019
Filing Date:
October 20, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L25/07; H01L23/34; H01L25/18
Domestic Patent References:
| JP2003204028A | 2003-07-18 | |||
| JP2011243909A | 2011-12-01 |
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa