Title:
SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019161071
Kind Code:
A
Abstract:
To improve the quality of processing for a substrate (for example, the quality of a membrane to be deposited).SOLUTION: The substrate processing apparatus includes: a processing chamber 201 for processing a substrate 200; a substrate supporting section 210 for supporting a substrate; a lifting mechanism 218 for lifting the substrate supporting section; a gas supply port 241 for supplying gas to a substrate; and a control section 260 for controlling a lifting operation of a lifting section to vary a distance between the gas supply port and a substrate supported by the substrate supporting section while gas is being supplied from the gas supply port.SELECTED DRAWING: Figure 1
Inventors:
YAHATA TAKASHI
OHASHI TADASHI
MATSUI SHUN
OHASHI TADASHI
MATSUI SHUN
Application Number:
JP2018047206A
Publication Date:
September 19, 2019
Filing Date:
March 14, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP
International Classes:
H01L21/31; C23C16/455; H01L21/683
Domestic Patent References:
| JP2007138295A | 2007-06-07 | |||
| JPH03281780A | 1991-12-12 | |||
| JPH09232297A | 1997-09-05 | |||
| JP2002343787A | 2002-11-29 | |||
| JP2003249491A | 2003-09-05 |
Foreign References:
| US20120231628A1 | 2012-09-13 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Aniya Setsuo