Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019161096
Kind Code:
A
Abstract:
To provide a semiconductor device including a MIM capacitor with extended life, and a method for manufacturing a semiconductor device.SOLUTION: A semiconductor device according to an embodiment includes a MIM capacitor which includes: a first electrode provided on a semiconductor substrate; a first insulating film provided on the first electrode and containing silicon nitride crystals; a second insulating film provided on the first insulating film and containing an oxide; and a second electrode provided on the second insulating film.SELECTED DRAWING: Figure 1
Inventors:
MATSUSHITA KEIICHI
Application Number:
JP2018048060A
Publication Date:
September 19, 2019
Filing Date:
March 15, 2018
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORP
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORP
International Classes:
H01L21/822; H01L21/316; H01L27/04
Attorney, Agent or Firm:
Masahiko Hinataji
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai
Takato Uchida
Junichi Kozaki
Hiroshi Ichikawa
Tatsutetsu Shirai
Takato Uchida