Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020065082
Kind Code:
A
Abstract:
To provide a semiconductor device having a structure capable of suppressing deterioration of electric characteristics which becomes noticeable at the time of miniaturization.SOLUTION: A semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film on the second oxide film, and a gate electrode in contact with the gate insulating film, and the upper end portion of the oxide semiconductor film in the channel width direction has a curved surface.SELECTED DRAWING: Figure 1
Inventors:
HANAOKA KAZUYA
MATSUBAYASHI DAISUKE
KOBAYASHI YOSHIYUKI
YAMAZAKI SHUNPEI
MATSUDA SHIMPEI
MATSUBAYASHI DAISUKE
KOBAYASHI YOSHIYUKI
YAMAZAKI SHUNPEI
MATSUDA SHIMPEI
Application Number:
JP2020005685A
Publication Date:
April 23, 2020
Filing Date:
January 17, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
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Foreign References:
| US20130009148A1 | 2013-01-10 | |||
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