Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2021044032
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of writing data at high speed.SOLUTION: A semiconductor storage device comprises: a memory cell array 20 which includes a plurality of NAND strings NS and in which each of the plurality of NAND strings comprises a plurality of memory cell transistors MT connected in series; a plurality of word lines which are connected in common to the plurality of memory strings NS and are respectively connected to the plurality of memory cell transistors MT; and a row decoder 26 for supplying prescribed voltage Vs higher than ground voltage VSS to each of the plurality of word lines WL after termination of program operation for writing data into the selected word line.SELECTED DRAWING: Figure 8
Inventors:
KIKUCHI KENRO
SHIMURA YASUHIRO
SHIMURA YASUHIRO
Application Number:
JP2019163385A
Publication Date:
March 18, 2021
Filing Date:
September 06, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
G11C16/10; G11C11/56; G11C16/04; G11C16/08
Attorney, Agent or Firm:
Patent Business Corporation Itoshin International Patent Office