Title:
MAGNETRON SPUTTERING CATHODE AND MAGNETRON SPUTTERING APPARATUS
Document Type and Number:
Japanese Patent JP2021143406
Kind Code:
A
Abstract:
To provide a magnetron sputtering cathode capable of preventing deposits, such as film deposition particles from collecting in a fixture.SOLUTION: A magnetron sputtering cathode includes a fixture 50 for fixing a sputtering target 1. The target 1 is constituted of a target base part 51, a target convex part 52 and a step surface 53 formed in a boundary part therebetween; the fixture 50 is constituted of a fixation lower part 55, a fixation upper part 56 and a pressing part 57 engaged to the step surface 53; and the surface of the target convex part 52 and the surface of the fixation upper part 56 form an approximately same plane. A no-step between the surface of the sputtering target 1 and the surface of the fixture 50 in the magnetron sputtering cathode can prevent deposits, such as film deposition particles from being stored in the periphery of the fixture 50.SELECTED DRAWING: Figure 3
Inventors:
SHIRAISHI AKINORI
Application Number:
JP2020043923A
Publication Date:
September 24, 2021
Filing Date:
March 13, 2020
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C23C14/34
Attorney, Agent or Firm:
Akira Ueda
Masahiro Koizumi
Kamei Takeyuki
Masahiro Koizumi
Kamei Takeyuki