Title:
【考案の名称】半導体素子の放熱構造
Document Type and Number:
Japanese Patent JP2504608
Kind Code:
Y2
Inventors:
Kazuhiko Hamada
Application Number:
JP5442390U
Publication Date:
July 10, 1996
Filing Date:
May 23, 1990
Export Citation:
Assignee:
Fujitsu Ten Limited
International Classes:
H01L23/40; H05K7/20; (IPC1-7): H01L23/40; H05K7/20
Attorney, Agent or Firm:
Nishikyo Keiichiro