Title:
【発明の名称】固体撮像素子
Document Type and Number:
Japanese Patent JP2723520
Kind Code:
B2
Abstract:
PURPOSE:To prevent generation of potential barrier which prevents read operation of signal charge in the section where the conductive region becomes narrow in the side of readout electrode by allowing the signal readout electrode to become longer than the length corresponding to the depth of junction between the second region and first semiconductor layer and to protrude over the second region. CONSTITUTION:The part Y protruding over the impurity region 4 of photodiode of electrode 6 of signal charge readout means is set longer then the length X corresponding to the junction depth of such impurity region. Thereby, since the interval between the end of impurity layer 7 of reverse conductivity type formed on the photodiode surface and the end of impurity region 4 can be set wider than the width corresponding to thickness of such impurity region 4 in the ion implantation process using the signal charge readout electrode 6 as the mask, the width of such impurity region is no longer narrowed at the end of such impurity region. Therefore, the potential barrier which has prevented readout operation of signal charge, which has been a problem in an existing solid-state image pickup element using a buried photodiode as the photodetecting element is no longer generated.
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Inventors:
TORYAMA KEIJI
Application Number:
JP17149987A
Publication Date:
March 09, 1998
Filing Date:
July 08, 1987
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L27/148; H01L27/14; H04N5/335; H04N5/355; H04N5/357; H04N5/369; H04N5/372; H04N5/374; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP6273662A | ||||
| JP6112064A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)