Title:
【発明の名称】回路内蔵受光素子
Document Type and Number:
Japanese Patent JP3139454
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make a light receiving element into one which is high in sensitivity of light reception and besides is excellent in high-speed responsiveness. SOLUTION: An n<+> buried layer 2 is made partially in the top of a p silicon substrate 1, and a p<+> buried layer 3 is patterned on this p<+> buried layer 2, and further an n epitaxial layer 6 is made, and a p<+> layer 7 is made by diffusing p-type impurities from the surface. Then, in the n epitaxial layer 6, a p<+> layer to connect a p<+> layer 7 with a p<+> buried layer 3 is made, and also an n<+> layer 5 to electrically lead the n<+> buried layer 2 to the surface of the element is made. Further, the p<+> buried layer 3 is made in the shape of comb teeth or a stripe in plan view, and the n<+> buried layer 2 and the n epitaxial layer 6 contact with each other in wide range. The n<+> layer 5 is connected to a power source Vcc, and a p<-> board 1 is connected to GND, and a p<+> diffused layer 7 is connected to a circuit part 9. A photo diode is made by the pn junctions made at the interface between the p<+> layer 7 and the n epitaxial layer 6, the interface between n epitaxial layer 6 and the p<+> buried layer 3, and the interface between the p<+> buried layer 3 and the n<+> buried layer 2.
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Inventors:
Hiroki Nagano
Application Number:
JP12512698A
Publication Date:
February 26, 2001
Filing Date:
May 07, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L27/14; H01L31/10; (IPC1-7): H01L31/10; H01L27/14
Domestic Patent References:
| JP1041488A | ||||
| JP9162378A | ||||
| JP9321265A | ||||
| JP22185A | ||||
| JP3163878A |
Attorney, Agent or Firm:
Masanori Fujimaki