Title:
電気的に導電性を有するコンタクトプラグの形成に関する半導体の製造方法
Document Type and Number:
Japanese Patent JP3593133
Kind Code:
B2
Abstract:
A semiconductor processing method of forming an electrically conductive contact plug relative to a wafer includes, a) providing a substrate to which electrical connection is to be made; b) depositing a layer of first material atop the substrate to a selected thickness; c) pattern masking the first material layer for formation of a desired contact opening therethrough; d) etching through the first material layer to form a contact opening therethrough for making electrical connection with the substrate, the contact opening having an outermost region; e) after etching to form the contact opening, removing the masking from the first material layer; f) after removing the masking from the first material layer, facet sputter etching into the first material layer relative to the contact opening to provide outwardly angled sidewalls which effectively widen the contact opening outermost region, the outwardly angled sidewalls having an inner base where they join with the original contact opening; g) depositing a layer of conductive material atop the wafer and to within the facet etched contact opening to fill the contact opening; and h) etching the conductive material and first material layer inwardly to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
Inventors:
Masuz, Vijkei.
Jen, Nansen
Phasen, Pierre See.
Jen, Nansen
Phasen, Pierre See.
Application Number:
JP52568096A
Publication Date:
November 24, 2004
Filing Date:
January 23, 1996
Export Citation:
Assignee:
Micron Technology, Ink.
International Classes:
H01L21/768; H01L23/14; H01L23/522; H01L21/28; (IPC1-7): H01L21/768; H01L21/28
Domestic Patent References:
| JP5275366A | ||||
| JP2001925A | ||||
| JP2012917A | ||||
| JP4251926A | ||||
| JP5090197A |
Attorney, Agent or Firm:
Masanori Ishihara
Takashi Ishihara
Takashi Ishihara