Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP4013750
Kind Code:
B2
Abstract:
To provide a nonvolatile semiconductor memory device of a new structure capable of reducing the area of a peripheral circuit by simplifying it.
In the structure of a flash memory, a high energy electron called DAHE is used for writing operation while a high energy hole called DAHH is used for erasing operation. A coupling ratio is adjusted so that the DAHE and DAHH are generated at a single kind of voltage value.
COPYRIGHT: (C)2004,JPO&NCIPI
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Inventors:
Yugo Yuuki
Tsuyoshi Kuzuhara
Shigemitsu Fukatsu
Tsuyoshi Kuzuhara
Shigemitsu Fukatsu
Application Number:
JP2002352622A
Publication Date:
November 28, 2007
Filing Date:
December 04, 2002
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G11C16/04; H01L21/8247; G11C16/02; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP6309884A | ||||
| JP2001135729A | ||||
| JP2001229683A | ||||
| JP6029552A | ||||
| JP2000150676A |
Foreign References:
| WO2001069673A1 |
Attorney, Agent or Firm:
Yoji Ito
Takahiro Miura
Fumihiro Mizuno
Takahiro Miura
Fumihiro Mizuno