Title:
集束イオン・ビーム装置及び集束イオン・ビーム照射方法
Document Type and Number:
Japanese Patent JP4431459
Kind Code:
B2
Abstract:
A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.
More Like This:
JPH06283466 | ELECTRON BEAM LITHOGRAPHY USING PHOTOCATHODE |
JPS5987816 | ELECTRON BEAM TRANSFER EQUIPMENT |
JPH06103957 | HIGH ENERGY ION IMPLANTATION |
Inventors:
Takeuchi Koichiro
Toru Ishitani
Yoichi Ose
Toru Ishitani
Yoichi Ose
Application Number:
JP2004222212A
Publication Date:
March 17, 2010
Filing Date:
July 29, 2004
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01J37/317; H01J37/04; H01J37/09; H01J37/147; H01J37/16; H01J37/28
Domestic Patent References:
JP59138044A | ||||
JP11329331A | ||||
JP7333120A | ||||
JP2000277047A | ||||
JP8083591A | ||||
JP2002033262A | ||||
JP2003022772A |
Attorney, Agent or Firm:
Yusuke Hiraki