To provide a solid-state imaging device for a board modulation type sensor miniaturized by downsizing cell pitch.

The solid-state imaging device comprises a plurality of modulation transistors Tm which are provided to a pair of photoelectric conversion regions adjoining in one direction of two-dimensional matrix, respectively, of which the threshold voltage of channel is controlled by the optical generation charge held by a modulation well, to output pixel signals corresponding to the optical generation charges. It further comprises a plurality of transfer control elements Tr which are provided by a pair to each adjoining one pair of photoelectric conversion regions, and change a potential barrier of optical generation charge transfer path between a storage well 4 of a pair of photoelectric conversion regions and a corresponding modulation well, to control transfer of optical generation charges.

COPYRIGHT: (C)2006,JPO&NCIPI