Title:
薄膜半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4784955
Kind Code:
B2
Abstract:
A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm2/V sec.
Inventors:
Matsumura Masayoshi
Koana Hokyu
Hiroyuki Abe
Yoshitaka Yamamoto
Hideo Koseki
Mitsunori Warabi
Koana Hokyu
Hiroyuki Abe
Yoshitaka Yamamoto
Hideo Koseki
Mitsunori Warabi
Application Number:
JP2001218370A
Publication Date:
October 05, 2011
Filing Date:
July 18, 2001
Export Citation:
Assignee:
LCD Advanced Technology Development Center Co., Ltd.
International Classes:
H01L21/20; B65G49/07; H01L21/336; H01L21/67; H01L21/673; H01L21/677; H01L21/77; H01L29/786; H01L21/84
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Other References:
Mitsuru Nakata, et. al., ”A New Nucleation-Site-Control Excimer-Laser-Crystallization Method”, Japanese Journal of Applied Physics, VOL. 40, Part 1, No.5A, 2001, pp.3049-3054
Chang-Ho Oh, et. al., ”Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing”, Japanese Journal of Applied Physics, VOL. 37, Part 1, No.10, 1998, pp.5474-5479
Chang-Ho Oh, et. al., ”Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing”, Japanese Journal of Applied Physics, VOL. 37, Part 1, No.10, 1998, pp.5474-5479
Attorney, Agent or Firm:
Hideo Suzuki