Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5151837
Kind Code:
B2
Abstract:
To extend the lifetime of a semiconductor element bonded to a substrate with solder.
A surface electrode 11 is provided on a front surface of a semiconductor element 1. The surface electrode 11 has a structure of, for example, having an Ni film 13 laminated on an Al film 12. The surface electrode 11 is bonded to a lead frame 3 with a solder layer 2 therebetween. A width of a fillet 20, namely, a width of a region on the outside of an end part of a contact surface to the lead frame 3, of the solder layer 2 is twice or more as greater as a thickness h of the solder layer 2.
COPYRIGHT: (C)2010,JPO&INPIT
Inventors:
Yoshinari Ikeda
Harutaka Taniguchi
Harutaka Taniguchi
Application Number:
JP2008232550A
Publication Date:
February 27, 2013
Filing Date:
September 10, 2008
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/60
Domestic Patent References:
| JP2006202885A |
Attorney, Agent or Firm:
Akinori Sakai