Title:
スパッタリングターゲット
Document Type and Number:
Japanese Patent JP5301021
Kind Code:
B2
Abstract:
A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.
Inventors:
Kazuaki Ebata
Shigekazu Sakai
Shigeo Matsuzaki
Yuuki Kakuma
Shigekazu Sakai
Shigeo Matsuzaki
Yuuki Kakuma
Application Number:
JP2012172373A
Publication Date:
September 25, 2013
Filing Date:
August 02, 2012
Export Citation:
Assignee:
IDEMITSU KOSAN CO.,LTD.
International Classes:
C23C14/34; C04B35/00; H01L21/336; H01L21/363; H01L29/786
Domestic Patent References:
| JP2007084842A | ||||
| JP2005290550A | ||||
| JP2008280216A | ||||
| JP2011174134A | ||||
| JP2011105995A | ||||
| JP2010053454A | ||||
| JP2003100154A |
Foreign References:
| WO2010070944A1 | ||||
| WO2008114588A1 | ||||
| WO2010032422A1 | ||||
| WO2011086940A1 | ||||
| WO2009157535A1 | ||||
| WO2009128424A1 | ||||
| WO2009008297A1 |
Attorney, Agent or Firm:
Kihei Watanabe