Title:
半導体装置
Document Type and Number:
Japanese Patent JP5372578
Kind Code:
B2
Abstract:
A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.
Inventors:
Kuramoto Takafumi
Yasutaka Nakashiba
Yasutaka Nakashiba
Application Number:
JP2009094877A
Publication Date:
December 18, 2013
Filing Date:
April 09, 2009
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/8238; H01L21/28; H01L21/336; H01L21/8234; H01L27/088; H01L27/092; H01L29/78
Domestic Patent References:
| JP2007036216A | ||||
| JP3282375B2 | ||||
| JP7235616A | ||||
| JP9172146A | ||||
| JP4053255A | ||||
| JP2008252003A | ||||
| JP2006013061A | ||||
| JP61014744A |
Attorney, Agent or Firm:
Shinji Hayami
Kana Nomoto
Satoshi Amagi
Kana Nomoto
Satoshi Amagi