Title:
薄膜電界効果型トランジスタ
Document Type and Number:
Japanese Patent JP5489429
Kind Code:
B2
Abstract:
To provide a TFT which has high field effect mobility, little threshold fluctuation, strong adhesiveness and superior impact resistance stability.
The thin film field effect transistor is a thin film field effect element including a gate electrode 2, a gate insulating film 3, an active layer 4, a source electrode and a drain electrode on a substrate. The gate insulating film 3 contains an organic insulating material, and the thin film field effect element has an intermediate layer 7 containing an inorganic material between the active layer 4 and the gate insulating film 3.
COPYRIGHT: (C)2010,JPO&INPIT
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Inventors:
Shinji Imai
Application Number:
JP2008179094A
Publication Date:
May 14, 2014
Filing Date:
July 09, 2008
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L29/786
Domestic Patent References:
| JP2006013480A | ||||
| JP2007115807A | ||||
| JP2007142196A | ||||
| JP2009194208A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda