Title:
シリコンリッチ酸化物を含むナノワイヤーおよびその製造方法
Document Type and Number:
Japanese Patent JP5600246
Kind Code:
B2
Abstract:
Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.
Inventors:
李 Silver Capital
崔 秉 Dragon
朴 Capital 洙
韓 在 鎔
崔 秉 Dragon
朴 Capital 洙
韓 在 鎔
Application Number:
JP2009089485A
Publication Date:
October 01, 2014
Filing Date:
April 01, 2009
Export Citation:
Assignee:
Samsung Electronics Samsung Electronics Co, Inc.., Ltd.
International Classes:
C01B33/113; B82B1/00; B82B3/00; H01L29/06; H01L31/10; H01L33/34
Attorney, Agent or Firm:
Hatta international patent business corporation