Title:
磁気抵抗効果素子及び磁気メモリ
Document Type and Number:
Japanese Patent JP5725735
Kind Code:
B2
Abstract:
Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
Inventors:
Hideo Ohno
Shoji Ikeda
Fumi Matsukura Thank you
Endo Shoki
Kanai Hayao
Hiroyuki Yamamoto
Katsuya Miura
Shoji Ikeda
Fumi Matsukura Thank you
Endo Shoki
Kanai Hayao
Hiroyuki Yamamoto
Katsuya Miura
Application Number:
JP2010129086A
Publication Date:
May 27, 2015
Filing Date:
June 04, 2010
Export Citation:
Assignee:
株式会社日立製作所
国立大学法人東北大学
国立大学法人東北大学
International Classes:
H01L43/08; H01L21/8246; H01L27/105; H01L43/10
Domestic Patent References:
| JP2009081315A | ||||
| JP2007266498A | ||||
| JP2008098515A | ||||
| JP2009194398A | ||||
| JP2008310403A |
Foreign References:
| WO2011152281A1 |
Attorney, Agent or Firm:
Kimura Mitsuru
Hiroyoshi Sato
Takanori Mamoru
Taiji Morikawa
Yusuke Hiraki
Sekiya Mitsuo
Toshiaki Watanabe
Hiroyoshi Sato
Takanori Mamoru
Taiji Morikawa
Yusuke Hiraki
Sekiya Mitsuo
Toshiaki Watanabe
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