Title:
半導体装置の製造方法および製造装置
Document Type and Number:
Japanese Patent JP5881612
Kind Code:
B2
Abstract:
A method for manufacturing a semiconductor device by etching a SiN film on a surface of a substrate by using a gas containing a halogen element includes supplying a gas containing a basic gas at the initial stage of a process for supplying the gas containing the halogen element to the surface of the SiN film. By supplying the gas containing the basic gas at the initial stage of the etching, a SiNO film covering the surface of the SiN film is changed to a film of reaction products mainly including water (H2O) and ammonium hexafluorosilicate ((NH4)2SiF6).
Inventors:
Hiroyuki Takahashi
Application Number:
JP2012542975A
Publication Date:
March 09, 2016
Filing Date:
November 10, 2011
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/302; H01L21/3065
Domestic Patent References:
| JP2009239056A | 2009-10-15 | |||
| JP2009158774A | 2009-07-16 | |||
| JP2010182730A | 2010-08-19 | |||
| JPH02256235A | 1990-10-17 | |||
| JP2009239056A | 2009-10-15 | |||
| JP2009158774A | 2009-07-16 | |||
| JP2010182730A | 2010-08-19 |
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Miaki Kametani
Naoki Ogita
Tetsuo Kanamoto
Miaki Kametani
Naoki Ogita