Title:
半導体装置
Document Type and Number:
Japanese Patent JP5924420
Kind Code:
B2
Abstract:
The present application discloses a semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate. The IGBT region includes: a collector layer; an IGBT drift layer; a body layer; a gate electrode; and an emitter layer. The diode region includes: a cathode layer; a diode drift layer; an anode layer; a trench electrode; and an anode contact layer. The diode region is divided into unit diode regions by the gate electrode or the trench electrode. In a unit diode region adjacent to the IGBT region, when seen in a plan view of the front surface of the semiconductor substrate, the anode layer and the anode contact layer are mixedly placed, and the anode contact layer is placed at least in a location opposite to the emitter layer with the gate electrode interposed therebetween.
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Inventors:
Satoru Kameyama
Keisuke Kimura
Keisuke Kimura
Application Number:
JP2014552840A
Publication Date:
May 25, 2016
Filing Date:
December 20, 2012
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L29/78; H01L27/04; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JP2011243694A | 2011-12-01 |
Attorney, Agent or Firm:
Kaiyu International Patent Office