Title:
ＣＶＤダイヤモンド単結晶
Document Type and Number:
Japanese Patent JP6409930
Kind Code:
B2
Abstract:
A diamond single crystal according to the present invention is a diamond single crystal synthesized using a chemical vapor synthesis method and has an absorption coefficient of 25 cm -1 or more and 80 cm -1 or less for light having a wavelength of 350 nm. A method for producing a diamond single crystal according to the present invention includes implanting an ion other than carbon into a main surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the main surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted main surface of the seed substrate using a chemical vapor synthesis method under synthesis conditions where the ratio N C /N H of the number of carbon-containing molecules N C to the number of hydrogen molecules N H in a gas phase is 10% or more and 40% or less, the ratio N N /N C of the number of nitrogen molecules N N to the number of carbon-containing molecules N C in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850°C or more and less than 1000°C.
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Inventors:
Ueda Akihiko
Yoshiki Nishibayashi
Hitoshi Kakutani
Yoshiki Nishibayashi
Hitoshi Kakutani
Application Number:
JP2017188357A
Publication Date:
October 24, 2018
Filing Date:
September 28, 2017
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/04; B23B27/14; B23B27/20; C23C16/27
Domestic Patent References:
| JP2005538018A | ||||
| JP2011519814A | ||||
| JP4223807A |
Attorney, Agent or Firm:
Masami Sakai
Yoshikuni Suda
Yoshikuni Suda