Title:
半導体装置
Document Type and Number:
Japanese Patent JP6430698
Kind Code:
B2
Abstract:
A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
Inventors:
Shunpei Yamazaki
Hideomi Suzawa
Tetsuhiro Tanaka
Yuichi Watanabe
Yuhei Sato
Yamane Yasumasa
Daisuke Matsubayashi
Hideomi Suzawa
Tetsuhiro Tanaka
Yuichi Watanabe
Yuhei Sato
Yamane Yasumasa
Daisuke Matsubayashi
Application Number:
JP2013261022A
Publication Date:
November 28, 2018
Filing Date:
December 18, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108
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