Title:
表面増強電場を用いた欠陥検出
Document Type and Number:
Japanese Patent JP6461904
Kind Code:
B2
Abstract:
A system and method for inspecting a surface of a wafer. The system includes a source generating an optical beam at a deep ultraviolet wavelength; a solid immersion lens, receiving the optical beam, positioned such that the air gap between the lens and the wafer surface is less than the wavelength, an enhanced electric field being generated at the wafer surface, at least one particle on the wafer receiving the enhanced electric field generating scattered light; a detector receiving the scattered light and generating a corresponding electrical signal; and a processor receiving and analyzing the electrical signal.
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Inventors:
Zhao Guo Heng
Short David W
Short David W
Application Number:
JP2016501352A
Publication Date:
January 30, 2019
Filing Date:
March 11, 2014
Export Citation:
Assignee:
KLA-Tenker Corporation
International Classes:
G01N21/17; G01N21/956
Domestic Patent References:
| JP2008082999A | ||||
| JP2003149120A | ||||
| JP2010197347A | ||||
| JP2012514748A | ||||
| JP7248217A |
Foreign References:
| US20090261250 |
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office