Title:
半導体の表面に金属コンタクトを形成する方法及び金属コンタクトを備える装置
Document Type and Number:
Japanese Patent JP6511451
Kind Code:
B2
Abstract:
A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.
Inventors:
Einfeld, Sven
Ludaeri, Luke
Kneisle, Michael
Ludaeri, Luke
Kneisle, Michael
Application Number:
JP2016540602A
Publication Date:
May 15, 2019
Filing Date:
December 17, 2014
Export Citation:
Assignee:
Forschungsverbund Berlin e.V.
International Classes:
H01L21/3065; H01L21/28; H01L21/3213; H01L21/768; H01L33/38
Domestic Patent References:
| JP2004119702A | ||||
| JP2008034614A | ||||
| JP2008098349A | ||||
| JP2010114430A | ||||
| JP2003158334A | ||||
| JP2015500562A | ||||
| JP2010067858A |
Attorney, Agent or Firm:
sk patent corporation
Akihiko Okuno
Hiroyuki Ito
Akihiko Okuno
Hiroyuki Ito