Title:
量子光学材料
Document Type and Number:
Japanese Patent JP6612650
Kind Code:
B2
More Like This:
Inventors:
Hiroo Omi
Bale Takehiko
Kaoru Shimizu
Shiro Saito
Bale Takehiko
Kaoru Shimizu
Shiro Saito
Application Number:
JP2016033065A
Publication Date:
November 27, 2019
Filing Date:
February 24, 2016
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
G02F3/00; G02B1/02
Domestic Patent References:
| JP2011529265A | ||||
| JP2010048952A | ||||
| JP2010054937A | ||||
| JP9139539A |
Foreign References:
| WO2008023821A1 | ||||
| WO2004106961A1 |
Other References:
Lv et al.,Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon,Applied Physics Letters,米国,AIP Publishing LLC.,2015年 4月 7日,Vol.106, Issue 14,pp.141102-1~pp.141102-5
BERTAINA et al.,Rare-earth solid-state qubits,nature nanotechnology,英国,Springer Nature,2007年 1月 3日,Vol.2,pp39-42
HASHIMOTO et al.,Investigations of Population Relaxation Properties of Hyperfine Sublevels in 167Er3+ Ions Doped in a Y2SiO5 Crystal,2013 Conference on Lasers and Electro-Optics Pacific Rim,米国,IEEE,2013年 6月30日,MG2-4
Inaba et al.,Epitaxial growth and optical properties of Er-doped CeO2 on Si(111),Optical Materials Express,米国,Optical Society of America,2018年 8月24日,Vol.8, No.9,pp.2843-pp.2849
BERTAINA et al.,Rare-earth solid-state qubits,nature nanotechnology,英国,Springer Nature,2007年 1月 3日,Vol.2,pp39-42
HASHIMOTO et al.,Investigations of Population Relaxation Properties of Hyperfine Sublevels in 167Er3+ Ions Doped in a Y2SiO5 Crystal,2013 Conference on Lasers and Electro-Optics Pacific Rim,米国,IEEE,2013年 6月30日,MG2-4
Inaba et al.,Epitaxial growth and optical properties of Er-doped CeO2 on Si(111),Optical Materials Express,米国,Optical Society of America,2018年 8月24日,Vol.8, No.9,pp.2843-pp.2849
Attorney, Agent or Firm:
Shigeki Yamakawa
Yuzo Koike
Masaki Yamakawa
Yuzo Koike
Masaki Yamakawa