Title:
トランジスタ
Document Type and Number:
Japanese Patent JP6683854
Kind Code:
B2
Abstract:
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2019018632A
Publication Date:
April 22, 2020
Filing Date:
February 05, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/477; H01L21/8242; H01L21/8244; H01L27/108; H01L27/11; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Domestic Patent References:
| JP2008040343A | ||||
| JP2009528670A | ||||
| JP2009167087A | ||||
| JP2009099953A | ||||
| JP2009278115A | ||||
| JP2009272427A |
Foreign References:
| WO2008139860A1 | ||||
| WO2009093625A1 |