Title:
シリコンオキシカーバイドの製造方法
Document Type and Number:
Japanese Patent JP6800461
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon oxycarbide that is chemically stable even at 1500°C and is excellent in heat resistance.SOLUTION: The present invention is a method for producing silicon oxycarbide by thermally decomposing a polysiloxane having a hydrosilyl group and a hydrosilylation-reactive carbon-carbon unsaturated group such as a vinyl group. It is preferable to perform the thermal decomposition of polysiloxane in an inert gas atmosphere.SELECTED DRAWING: None
Inventors:
Ken Iwase
Horie Yoji
Eiichi Okazaki
Yuji Iwamoto
Honda Sawa
Yusuke Oyuki
Horie Yoji
Eiichi Okazaki
Yuji Iwamoto
Honda Sawa
Yusuke Oyuki
Application Number:
JP2016226305A
Publication Date:
December 16, 2020
Filing Date:
November 21, 2016
Export Citation:
Assignee:
Toagosei Co., Ltd.
National Institute of Technology Nagoya Institute of Technology
National Institute of Technology Nagoya Institute of Technology
International Classes:
C01B32/90
Domestic Patent References:
| JP6511280A | ||||
| JP8188443A | ||||
| JP2011052170A |
Other References:
田内 久仁和 ET al.,東亞合成研究年報,日本,2004年,第7号,p.22-28
Attorney, Agent or Firm:
Kiyoshi Kojima
Yasuyuki Hiraiwa
Masaru Suzuki
Yasuyuki Hiraiwa
Masaru Suzuki