Title:
トランジスタ
Document Type and Number:
Japanese Patent JP6818114
Kind Code:
B2
Abstract:
A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes oxygen and silicon, a gate electrode adjacent to the oxide semiconductor film, the oxide semiconductor film provided to be in contact with the insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the interface with the insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region.
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Inventors:
Tatsuya Honda
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Application Number:
JP2019206014A
Publication Date:
January 20, 2021
Filing Date:
November 14, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L27/32; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
| JP2011091381A | ||||
| JP2011100981A | ||||
| JP2010186994A |
Foreign References:
| WO2010061886A1 | ||||
| WO2011040028A1 | ||||
| US20110068336 | ||||
| US20110084273 | ||||
| US20100181565 |