Title:
自己制御原子熱エッチングシステム及び方法
Document Type and Number:
Japanese Patent JP6858871
Kind Code:
B2
Abstract:
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.
Inventors:
Arne Paris, Langarao
Goradia, Preluna Sonsaria
Fisser, Robert Yang
Ingle, Nitin
Korlik, Mikhail
Biswath, gyeta
Roda, Soulove
Goradia, Preluna Sonsaria
Fisser, Robert Yang
Ingle, Nitin
Korlik, Mikhail
Biswath, gyeta
Roda, Soulove
Application Number:
JP2019541231A
Publication Date:
April 14, 2021
Filing Date:
February 02, 2018
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3065
Domestic Patent References:
| JP2014192245A |
Foreign References:
| WO2016138218A1 | ||||
| US20150270140 | ||||
| US20160284556 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation