Title:
ＩＩＩ族窒化物層及びダイヤモンド層を有するウエハ
Document Type and Number:
Japanese Patent JP6858872
Kind Code:
B2
Abstract:
Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A first SiC layer is formed on a silicon substrate, and using a carbon containing gas, a surface of the first SiC layer is carbonized to form carbon particles on the SiC layer. Then, a diamond layer is grown on the carbonized surface, where the carbon atoms act as seed particles for growing the diamond layer. A second SiC layer is formed on the diamond layer and a semiconductor layer having III-Nitride compounds is formed on the second SiC layer. Then, the silicon substrate and the first SiC layer are removed.
Inventors:
Cho, Sam Yul
Lee Wonsan
Lee Wonsan
Application Number:
JP2019541301A
Publication Date:
April 14, 2021
Filing Date:
July 08, 2018
Export Citation:
Assignee:
RF FIC Corporation
International Classes:
C30B29/38; C30B25/20; C30B29/04; H01L21/205
Domestic Patent References:
| JP9181355A | ||||
| JP2008085123A | ||||
| JP2009065082A | ||||
| JP2018506169A |
Foreign References:
| WO2016096556A1 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki