コンタクトパッドの製造方法及びこれを用いた半導体装置の製造方法、並びに半導体装置

Title:

コンタクトパッドの製造方法及びこれを用いた半導体装置の製造方法、並びに半導体装置

Document Type and Number:

Japanese Patent JP6906604

Kind Code:

B2

Abstract:

A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

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Inventors:

Koichi Hatta
Takashi Hayakawa
Mitsuaki Iwashita
Takashi Tanaka

Application Number:

JP2019504496A

Publication Date:

July 21, 2021

Filing Date:

February 27, 2018

Export Citation:

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Assignee:

東京エレクトロン株式会社

International Classes:

H01L27/11575; H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L23/532; H01L27/11521; H01L27/11548; H01L27/11568; H01L29/788; H01L29/792

Domestic Patent References:

JP2011035237A
JP2013055136A
JP2013058683A

Foreign References:

WO2010050094A1

Attorney, Agent or Firm:

Tadashige Ito
Tadahiko Ito

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