Title:
基板処理方法及び基板処理装置
Document Type and Number:
Japanese Patent JP6919350
Kind Code:
B2
Abstract:
There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.
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Inventors:
Hideomi Hane
Kentaro Oshita
Shimon Otsuki
Atsushi Ogawa
Noriaki Fukiage
Hiroaki Ikekawa
Yasuo Kobayashi
Satoshi Koyama
Kentaro Oshita
Shimon Otsuki
Atsushi Ogawa
Noriaki Fukiage
Hiroaki Ikekawa
Yasuo Kobayashi
Satoshi Koyama
Application Number:
JP2017114467A
Publication Date:
August 18, 2021
Filing Date:
June 09, 2017
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H01L21/31; H01L21/318
Domestic Patent References:
| JP2010177480A | ||||
| JP2015180768A | ||||
| JP2002214793A | ||||
| JP2010010497A |
Foreign References:
| US20050191852 | ||||
| US20160071980 | ||||
| US20150093870 | ||||
| US6316349 | ||||
| US20090017633 | ||||
| US20060219657 |
Attorney, Agent or Firm:
Patent Corporation Yayoi Patent Office
Toshio Inoue
Tomoaki Miida
Toshio Inoue
Tomoaki Miida