Title:
半導体エピタキシャルウェーハの製造方法
Document Type and Number:
Japanese Patent JP6930459
Kind Code:
B2
Abstract:
To provide a manufacturing method of a semiconductor epitaxial wafer capable of reliably having high gettering ability when phosphorus is included in a constituent element of a cluster ion.SOLUTION: A manufacturing method of a semiconductor epitaxial wafer according to the present invention includes a first step of forming a modified layer on a surface layer of a semiconductor wafer by multi-element cluster ion implantation, and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer, and the constituent element of a multi-element cluster ion include carbon, hydrogen, and phosphorus, and the epitaxial growth processing temperature in the second step is set to 800°C or higher and 1000°C or lower.SELECTED DRAWING: Figure 2
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Inventors:
Ryo Hirose
Application Number:
JP2018036913A
Publication Date:
September 01, 2021
Filing Date:
March 01, 2018
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/322; H01L21/20; H01L21/265
Domestic Patent References:
| JP2014099482A | ||||
| JP2017157613A | ||||
| JP2015130402A | ||||
| JP2010114409A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui
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