Title:
ハイスループット気相成長デバイス及び気相成長方法
Document Type and Number:
Japanese Patent JP7398549
Kind Code:
B2
Abstract:
The present invention provides a high-throughput vapor deposition apparatus and a vapor deposition method. A rotary workbench (2) is located in a reaction chamber (1); a gas introduction device (3) is located in the reaction chamber (1) and above the rotary workbench (2); a plurality of through holes (31) is provided on the gas introduction device (3); a gas isolation structure (4) divides an upper chamber (11) into an isolation gas chamber (111) and a reaction gas chamber (112) which are isolated from each other; an isolation gas is introduced into the isolation gas chamber (111) via an isolation gas introduction channel (5), and a reaction gas is introduced into the reaction gas chamber (112) via a reaction gas introduction channel (6), for carrying out thin film deposition on an area of a substrate corresponding to the reaction gas chamber (112). The high-throughput vapor deposition apparatus only requires one isolation gas supply system and one reaction gas isolation system, a total of two systems, and thus is simple in structure, easy to implement, and good in isolation.
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Inventors:
Lee Weimin
Yoo Wenjie
Zhu Thunder
King Itsuei
Yoo Wenjie
Zhu Thunder
King Itsuei
Application Number:
JP2022510171A
Publication Date:
December 14, 2023
Filing Date:
November 21, 2019
Export Citation:
Assignee:
Chinese Academy of Sciences Shanghai Micro System Information Technology Research Institute
International Classes:
H01L21/31; C23C16/44
Domestic Patent References:
| JP2009516777A | ||||
| JP63011672A | ||||
| JP2019009264A | ||||
| JP2011190519A | ||||
| JP2011012331A |
Attorney, Agent or Firm:
Patent Attorney Corporation Hanabusa Patent and Trademark Office