Title:
高度に選択的な窒化ケイ素エッチングのための改良された配合物
Document Type and Number:
Japanese Patent JP7398550
Kind Code:
B2
Abstract:
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
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Inventors:
White, Daniela
Kyper, David
DiMeo, Susan
Kyper, David
DiMeo, Susan
Application Number:
JP2022511095A
Publication Date:
December 14, 2023
Filing Date:
August 21, 2020
Export Citation:
Assignee:
Entegris Incorporated
International Classes:
H01L21/308; H01L21/306
Domestic Patent References:
| JP2018085513A | ||||
| JP2004079984A | ||||
| JP63241030A | ||||
| JP1207325A | ||||
| JP2005500231A |
Foreign References:
| US20190211228 | ||||
| KR1020190040743A | ||||
| WO2019139828A1 | ||||
| US20180142151 | ||||
| US20040033764 | ||||
| US20040152789 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation