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Title:
半導体製造におけるマルチゾーンヒータのモデルベース制御
Document Type and Number:
Japanese Patent JP7483854
Kind Code:
B2
Abstract:
A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

Inventors:
Cimino, Mauro
Caruarachi, Don Channa
phi, son
Vishnu Prasad, Ramyashree
Lubomirsky, Dmitry
Application Number:
JP2022502882A
Publication Date:
May 15, 2024
Filing Date:
July 17, 2020
Export Citation:
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Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3065; G05D23/00
Domestic Patent References:
JP2014533431A
JP2017022216A
JP2016178316A
Foreign References:
US20050267606
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation