Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58138026
Kind Code:
A
Abstract:
PURPOSE:To reduce the number of required steps and facilitate the control of the surface resistance of a diffused region without any diffusion of undesired impurities due to a rosette and without increasng the diffusion depth in the periphery of a desired impurity-diffused region, by laminating a glass film containing impurities and a polycrystalline silicon film on a desired impurity-diffused region on a semiconductor substrate, and oxidizing the substrate surface not covered with the laminate and the surface of the polycrystalline silicon film, and then effecting the diffusion of the impurities. CONSTITUTION:With the atmosphere changed from wet O2 to dry O2, the temperature is raised and a heat treatment is carried out to diffuse Sb from an antimony glass film 22, thereby forming an N type impurity-diffused region 25. In the diffusion of Sb, since the antimony glass film 22 has an SiO2 film 23' formed thereon, the Sb is prevented from being outwardly diffused from the upper surface of the antimony glass film 22 to greatly reduce the contamination of the environment. Particularly, the diffusion toward the silicon substrate 21 is stabilized to make it possible to facilitate the control of the surface resistance value.
Inventors:
FUKUYAMA TOSHIHIKO
Application Number:
JP2051382A
Publication Date:
August 16, 1983
Filing Date:
February 10, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/225; (IPC1-7): H01L21/22
Attorney, Agent or Firm:
Koshiro Matsuoka