【発明の名称】光半導体装置

Title:

【発明の名称】光半導体装置

Document Type and Number:

Japanese Patent JPS6057714

Kind Code:

B2

Abstract:

A photo-semiconductor device includes an active region of semiconductor material in which carriers contributing to a photocurrent are generated by the irradiation of incident light. On one surface of the active region is formed a main junction towards which those carriers move. In the active region is buried an additional region to form at the interface between the additional and active regions an additional junction which attracts a substantial portion of thermally generated carriers. The remaining portion of the thermally generated carriers is partially recombined internally and partially attracted to the main junction. Thus, dark current is reduced.

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Inventors:

OOCHI HIROBUMI
MUKAI TOJI

Application Number:

JP867178A

Publication Date:

December 16, 1985

Filing Date:

January 27, 1978

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L27/14; H01L27/146; H01L31/10; H01L31/11; H01L31/113; (IPC1-7): H01L31/10; H01L27/14

Attorney, Agent or Firm:

Hiraki Michito

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