Title:
半導体基板用パッシベーション膜形成用材料、半導体基板用パッシベーション膜を有する半導体基板の製造方法、太陽電池素子及び太陽電池素子の製造方法
Document Type and Number:
Japanese Patent JPWO2013111463
Kind Code:
A
Inventors:
Akihiro Oda
Yoshida Masato
Nojiri 剛
Yasushi Kurata
Toru Tanaka
Shuichiro Adachi
Takeshi Hayasaka
Yoshida Masato
Nojiri 剛
Yasushi Kurata
Toru Tanaka
Shuichiro Adachi
Takeshi Hayasaka
Application Number:
JP2012082099W
Publication Date:
May 11, 2015
Filing Date:
December 11, 2012
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
H01L21/316; H01L31/0216
Attorney, Agent or Firm:
Patent business corporation solar international patent firm