Document Type and Number:
Japanese Patent JPWO2021002131
Kind Code:
A1
Abstract:
A semiconductor film contains aggregates of semiconductor quantum dots containing a metal atom and a ligand that is coordinated to the semiconductor quantum dot, where the ligand contains a first ligand that is an inorganic halide and a second ligand that is represented by any one of Formulae (A) to (C). XA1 and XA2 are separated by LA1 by 1 or 2 atoms, XB1 and XB3, and XB2 and XB3 are respectively independently separated by LB1 and LB2 by 1 or 2 atoms, and XC1 and XC4, XC2 and XC4, and XC3 and XC4 are respectively independently separated by LC1, LC2, or LC3 by 1 or 2 atoms.
Application Number:
JP2021529926A
Publication Date:
January 07, 2021
Filing Date:
June 01, 2020
Export Citation:
Domestic Patent References:
| JP2014093327A | 2014-05-19 |
Foreign References:
| US20180145204A1 | 2018-05-24 | |||
| US20150183943A1 | 2015-07-02 | |||
| US20180151817A1 | 2018-05-31 |
Other References:
SANTANU PRADHAN ET AL.: ""Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergisti", SMALL, vol. Vol.13, Article number 1700598, JPN6023000058, 2017, pages 1 - 9, ISSN: 0004966203