Document Type and Number:
Japanese Patent JPWO2022131059
Kind Code:
A1
Abstract:
A manufacturing method for a semiconductor element includes forming a mask (21) on a front surface (11a) of a substrate (11), the mask having an opening to expose the front surface, growing a GaN layer (32), which is a first semiconductor layer by epitaxially growing a semiconductor along the mask (21), starting from the front surface (11a) exposed through the opening (22), and growing a GaN layer (33), which is a second semiconductor layer. On a surface (33a) located opposite to the substrate 11 in a layering direction and on which a Schottky electrode (41) is provided, a width (w2) from an end portion of the surface (33a) to the Schottky electrode (41) is smaller than a width (w1) of the mask (21).
Application Number:
JP2022569881A
Publication Date:
June 23, 2022
Filing Date:
December 06, 2021
Export Citation:
