Document Type and Number:
Japanese Patent JPWO2022153918
Kind Code:
A1
Abstract:
This silicon carbide epitaxial layer includes a buffer layer, transition layer, and drift layer. When the surface density of a first defect is a first surface density, and the surface density of a second defect is a second surface density, the first surface density is 0.03 pieces/cm2 or more, and a value obtained by dividing the second surface density by the total of the first surface density and the second surface density is less than 2.91%. The first defect has, as viewed in the vertical direction with respect to a main surface, a shape branching into two sections from a first starting point. There is no recessed groove on a virtual line segment linking both ends of the first defect. The second defect includes, as viewed in the vertical direction with respect to the main surface, a V-shaped defect that branches into two sections from a second starting point, and a trapezoid defect that has a trapezoidal shape and connects to the V-shaped defect. The trapezoid defect has a first bottom that connects to both ends of the V-shaped defect, and a second bottom on the side opposite to the first bottom. The second bottom has a recessed groove.
Application Number:
JP2022575555A
Publication Date:
July 21, 2022
Filing Date:
January 06, 2022
Export Citation:
