To provide an amplification type solid-state imaging element which can discard excess signal charges, and as a result, can reduce a mixed color and suppress a blooming, and enhance a color reproducibility.
The amplification type solid-state imaging element uses a semiconductor substrate in which an N type semiconductor layer (2) is epitaxially deposited on a P type semiconductor substrate (1), and photoelectrically converting parts (3) are formed on the N type semiconductor layer. The amplification type solid-state imaging element comprises a first P type semiconductor layer (5) formed beneath the photoelectrically converting part of at least one of a G pixel (200) and a B pixel (300), a second P type semiconductor layer (7) formed so as to surround each of the photoelectrically converting parts by use of the first P type semiconductor layer and having a depth down to the first P type semiconductor layer, and a third P type semiconductor layer (7) formed so as to surround an R pixel (100) and having a depth down to the P type semiconductor substrate.
GOTO HIROSHIGE
| JP2004165462A | 2004-06-10 | |||
| JP2004186408A | 2004-07-02 | |||
| JP2005209695A | 2005-08-04 | |||
| JP2005166731A | 2005-06-23 | |||
| JP2008078302A | 2008-04-03 |
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto