To provide an apparatus for producing a metallic film by which the degree of the reduction of thickness caused by etching in the member of metal to be etched can easily and correctly be detected when it is etched to deposit a film of the metal.
The member 18 made of Cu to be etched provided inside a chamber 1 is subjected to etching with gaseous Cl2 plasma 14 to stick a Cu component on a substrate 3, and a Cu thin film 16 is deposited. In this case, a plasma-luminous alarm gas is sealed into the member 18 to be etched in the case of performing the deposition of the Cu thin film 16. Further, the sealed alarm gas is allowed to leak inside the chamber 1 when the reduction of its thickness progresses in accordance with the progression of the etching of the member 18 to be etched, and the plasma luminescence is allowed to occur. Also, on the plasma luminescence of the alarm gas, the plasma luminescence is detected with spectroscopies 33a and 33b.
SAKAMOTO HITOSHI
IRIE TAKAYUKI
MIZUI JUNICHI
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto